onsemi FQD10N20LTM

Name: onsemi FQD10N20LTM
Brand: onsemi
SKU: FQD10N20LTM

N-Channel Power MOSFET, Logic Level, QFET®, 200 V, 7.6 A, 380 mΩ, DPAK

EOL

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Farnell	2	FQD10N20LTM	0	1	Cut Tape	1.541*	1.281*	0.946*	0.946*	0.946*	17h
element14 APAC	2	FQD10N20LTM	0	1	Cut Tape	1.194*	0.944*	0.804*	0.583*	0.556*	12h
Weyland Electronics Group Pte. Ltd.		FQD10N20LTM	4,430	1	Tape & Reel	4.958	4.958	4.958	4.958	4.958	23h
Win Source		WS-FQD10N20LTM	6,000	18				2.239	1.940	1.940	23h
Worldway Electronics		FQD10N20LTM	9,499	7	Tape & Reel		0.615	0.597	0.565	0.565	22h

CAD Models

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Alternate Parts

1 part available

Datasheets & Documents

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Upverter

Technical Drawing1 page3 years ago

IHS

onsemi

Fairchild Semiconductor

DigiKey

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Alternate Parts

This Part

Alternate Parts

onsemiFQD10N20LTM

onsemiFQD12N20LTM

Price @ 1000

$ 0.432

Stock

197,462

1,949,125

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

200 V

Continuous Drain Current (ID)

7.6 A

9 A

Threshold Voltage

2 V

Rds On Max

360 mΩ

280 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

2.5 W

Input Capacitance

830 pF

1.08 nF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-09-13

Lifecycle StatusEOL (Last Updated: 2 days ago)

LTB Date2022-12-30

LTD Date2023-06-30

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)

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Descriptions

Descriptions of onsemi FQD10N20LTM provided by its distributors.

N-Channel Power MOSFET, Logic Level, QFET®, 200 V, 7.6 A, 380 mΩ, DPAK

onsemi

FQD10N20L Series 200 V 7.6 A 360 mO N-Channel QFET MOSFET - TO-252-3

Future Electronics

Trans MOSFET N-CH 200V 7.6A 3-Pin(2+Tab) DPAK T/R

Avnet

MOSFET, N-CH, 200V, 7.6A, 150DEG C, 51W; Available until stocks are exhausted Alternative available

Farnell

TAPE REEL/N-CH/LL/200V/7.6A/0.36OHM@VGS=10V/0.38OHM@VGS=5V

Newark

场效应管, MOSFET, N沟道, 200V, 7.6A, 150度 C, 51W;

element14 APAC

Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IHS

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor