Descriptions of onsemi FQD10N20LTM provided by its distributors.
N-Channel Power MOSFET, Logic Level, QFET®, 200 V, 7.6 A, 380 mΩ, DPAK
FQD10N20L Series 200 V 7.6 A 360 mO N-Channel QFET MOSFET - TO-252-3
Trans MOSFET N-CH 200V 7.6A 3-Pin(2+Tab) DPAK T/R
MOSFET, N-CH, 200V, 7.6A, 150DEG C, 51W; Available until stocks are exhausted Alternative available
N-Channel MOSFET, 200V, 7.6A, 380m¦¸, Logic Level, DPAK
TAPE REEL/N-CH/LL/200V/7.6A/0.36OHM@VGS=10V/0.38OHM@VGS=5V
场效应管, MOSFET, N沟道, 200V, 7.6A, 150度 C, 51W;
MOSFETs 200V N-Ch QFET Logic Level
Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.