IGBT,N CH,FAST W/DIO,600V,40A,TO-3PF; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3PF; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:100W
Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Product Highlights: High speed switching Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A High input impedance