onsemi FDT458P

Name: onsemi FDT458P
Brand: onsemi
SKU: FDT458P

P-Channel PowerTrench® MOSFET, 30V, -3.4A, 130mΩ

$ 0.384

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Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Future Electronics		FDT458P	8,000	4K	Tape & Reel					0.380
Newark	2	FDT458P	3,500	5	Cut Tape		0.612	0.510	0.510	0.510
Rochester Electronics		FDT458P	2,769					0.346	0.287	0.256	12h
Verical	2	FDT458P	1,090	964					0.389	0.320
DigiKey	3	FDT458PCT-ND	8,000	1	Cut Tape	1.270	0.797	0.524	0.369	0.337

Inventory History

3 month trend: -13.38%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDT458P.

IHS

Datasheet0 pages0 years ago

element14 APAC

Future Electronics

onsemi

Farnell

Inventory History

3 month trend:

-13.38%

CAD Models

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Supply Chain

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2001-07-06

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDT458P provided by its distributors.

P-Channel PowerTrench® MOSFET,30V, -3.4A, 130mΩ

onsemi

Single P-Channel 30 V 210 mOhm 3.5 nC 3 W PowerTrench SMT Mosfet - SOT-223

Future Electronics

MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):105mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:3W; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Current Id Max:3.4A; Package / Case:SOT-223; Power Dissipation Pd:3W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:-1.8V; Voltage Vgs Rds on Measurement:10V

element14 APAC

This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

Fairchild Semiconductor