onsemi FDT3612

Name: onsemi FDT3612
Brand: onsemi
SKU: FDT3612

ON SEMICONDUCTOR - FDT3612 - MOSFET Transistor, N Channel, 3.7 A, 100 V, 0.12 ohm, 10 V, 2.5 V

$ 0.334

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Distributor		SKU		Min	Pkg
Avnet	2	58K1477	2	1		0.548	0.548	0.548	0.548	0.548	6d
Newark	2	FDT3612	2	1	Cut Tape	0.092	0.092	0.092	0.092	0.092
Verical	6	FDT3612	3,935	6			0.582	0.419	0.315	0.263
Arrow Electronics		FDT3612	3,935	1		0.780	0.582	0.419	0.315	0.290
Master Electronics		FDT3612	3,800	100				0.500	0.352	0.250

Inventory History

3 month trend: -9.16%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDT3612.

IHS

Datasheet7 pages3 years ago

Datasheet0 pages0 years ago

Upverter

Fairchild Semiconductor

element14 APAC

onsemi

Inventory History

3 month trend:

-9.16%

CAD Models

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Supply Chain

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2001-05-15

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDT3612 provided by its distributors.

ON SEMICONDUCTOR - FDT3612 - MOSFET Transistor, N Channel, 3.7 A, 100 V, 0.12 ohm, 10 V, 2.5 V

SHENGYU ELECTRONICS

N-Channel PowerTrench® MOSFET, 100V, 3.7A, 120mΩ

onsemi

N-Channel 100 V 120 mOhm SMT PowerTrench Mosfet- SOT-223

Future Electronics

MOSFET, N CH, 100V, 3.7A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):120mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:10.2A; Package / Case:SOT-223; Power Dissipation Pd:3W; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V

element14 APAC

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Fairchild Semiconductor