onsemi FDT457N

Name: onsemi FDT457N
Brand: onsemi
SKU: FDT457N

N-Channel Enhancement Mode Field Effect Transistor 30V, 5A, 60mΩ

$ 0.339

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet		FDT457N	8,000	4K						0.296	2d
Rochester Electronics		FDT457N	99					0.364	0.302	0.269	6h
DigiKey	2	FDT457NCT-ND	1,021	1	Cut Tape	1.320	0.827	0.545	0.385	0.352
Newark	2	FDT457N	0	4K	Tape & Reel					0.435
Onlinecomponents.com		FDT457N	0	100	Bulk			0.508	0.339	0.274

Inventory History

3 month trend: -5.93%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDT457N.

IHS

Datasheet6 pages3 years ago

Datasheet5 pages0 years ago

Upverter

element14 APAC

onsemi

Farnell

Inventory History

3 month trend:

-5.93%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiFDT457N

STMicroelectronicsSTN4NF03L

Price @ 1000

$ 0.339

$ 0.294

Stock

345,566

2,607,197

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-223

Drain to Source Voltage (Vdss)

850 mV

30 V

Continuous Drain Current (ID)

5 A

6.5 A

Threshold Voltage

1.6 V

1 V

Rds On Max

60 mΩ

50 mΩ

Gate to Source Voltage (Vgs)

20 V

16 V

Power Dissipation

3 W

3.3 W

Input Capacitance

235 pF

330 pF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1998-08-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDT457N provided by its distributors.

N-Channel Enhancement Mode Field Effect Transistor 30V, 5A, 60mΩ

onsemi

3W(Ta) 20V 3V@ 250¦ÌA 5.9nC@ 5 V 1N 30V 60m¦¸@ 5A,10V 5A 235pF@15V SOT-223-4 6.5mm*3.5mm*1.8mm

UnikeyIC

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 5A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:5A; On Resistance, Rds(on):60mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SOT-223 ;RoHS Compliant: Yes

Newark

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.

Fairchild Semiconductor