onsemi FDS8928A

Name: onsemi FDS8928A
Brand: onsemi
SKU: FDS8928A

Dual N & P-Channel 30 V 30 mOhm Power Field Effect Transistor-SOIC-8

EOL

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Distributor		SKU		Min	Pkg
Farnell	2	FDS8928A..	0	1	Cut Tape	0.968*	0.968*	0.968*	0.968*	0.968*	1d
element14 APAC	2	FDS8928A..	0	1	Cut Tape	1.098*	0.925*	0.822*	0.608*	0.571*	20h
ICPartonline		FDS8928A	6,703			19.000	18.050	17.100	16.150	15.200	2d
Worldway Electronics		FDS8928A	13,732	7	Tape & Reel		0.308	0.298	0.283	0.283	6h
Anlinkda		FDS8928A	21,661			1.139	1.020	0.876	0.855	0.814	15h

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Technical Drawing1 page6 years ago

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element14 APAC

onsemi

Farnell

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1998-07-01

Lifecycle StatusEOL (Last Updated: 3 days ago)

LTB Date2022-01-31

LTD Date2023-01-31

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

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Descriptions

Descriptions of onsemi FDS8928A provided by its distributors.

Dual N & P-Channel 30 V 30 mOhm Power Field Effect Transistor-SOIC-8

Future Electronics

Power Field-Effect Transistor, 5.5A I(D), 30V, 0.03ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

Rebound Electronics

MOSFET, DUAL, NP, SMD, 8-SOIC; Transistor Type:MOSFET; Transistor Polarity:NP; Voltage, Vds Typ:30V; Current, Id Cont:5.5A; On State Resistance:0.03ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.67V; Case Style:SOIC; Termination Type:SMD

Farnell

These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Fairchild Semiconductor