Infineon IRF7307TRPBF
$ 0.72
Obsolete
Price and Stock
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SKU
Min
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Inventory History
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CAD Models
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1 part available
CAD Models
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.72
$ 0.8
Stock
639,726
101,260
Authorized Distributors
1
1
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SO
Drain to Source Voltage (Vdss)
20 V
20 V
Continuous Drain Current (ID)
4.3 A
5.2 A
Threshold Voltage
700 mV
-
Rds On Max
50 mΩ
-
Gate to Source Voltage (Vgs)
12 V
12 V
Power Dissipation
2 W
2 W
Input Capacitance
660 pF
610 pF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1995-07-01
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2022-10-15
LTD Date2023-04-15
Related Parts
InfineonIRF7301PBF
Transistor: 2xN-MOSFET; unipolar; 20V; 5.2A; 0.05ohm; 2W; -55+150 deg.C; SMD; SO8
STMicroelectronicsSTS5DNF20V
N-channel 20 V, 0.030 Ohm typ., 5 A STripFET(TM) II Power MOSFET in a SO-8 package
Descriptions
Descriptions of Infineon IRF7307TRPBF provided by its distributors.
MOSFET N/P-CH 20V 5.2A/4.3A 8SO "Mosfet Array 20V 5.2A, 4.3A 2W Surface Mount 8-SO"
Dual N/P-Channel 20 V 0.07/0.14 Ohm 20/22 nC HEXFET® Power Mosfet - SOIC-8
20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Trans MOSFET N/P-CH 20V 5.7A/4.7A 8-Pin SOIC T/R
HEXFET POWER MOSFET Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
DUAL N/P CHANNEL MOSFET, 20V, SOIC; Tran; DUAL N/P CHANNEL MOSFET, 20V, SOIC; Transistor Polarity:N and P Channel; Continuous Drain Current Id, N Channel:5.2A; Continuous Drain Current Id, P Channel:-4.3A; Drain Source Voltage Vds, N Channel:20V
Transistor Polarity:complementary N And P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:5.2A; On Resistance Rds(On):0.05Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; No. Of Pins:8Pins Rohs Compliant: Yes
Transistor Polarity = N-Channel / Transistor Polarity = P-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 5.7 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 90 / Gate-Source Voltage V = 12 / Fall Time ns = 51 / Rise Time ns = 42 / Turn-OFF Delay Time ns = 51 / Turn-ON Delay Time ns = 9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
No data available
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)4.3 A
Current Rating5.2 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vdss)20 V
Gate to Source Voltage (Vgs)12 V
Input Capacitance660 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
On-State Resistance50 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2 W
Rds On Max50 mΩ
Resistance50 mΩ
Schedule B8541290080
Threshold Voltage700 mV
Turn-Off Delay Time51 ns
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements