onsemi FDS6673BZ

Name: onsemi FDS6673BZ
Brand: onsemi
SKU: FDS6673BZ

P-Channel PowerTrench® MOSFET -30V, 14.5A, 7.8mΩ

$ 0.525

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet	3	FDS6673BZ	2,500	603					1.107	1.038	5h
Future Electronics		FDS6673BZ	2,500	2500	Tape & Reel					0.595
Newark	2	FDS6673BZ	622	1	Cut Tape	0.190	0.190	0.190	0.190	0.190
Master Electronics		FDS6673BZ	1,500	50				0.889	0.494	0.405
Onlinecomponents.com		FDS6673BZ	1,500	50	Bulk			0.889	0.494	0.405

Inventory History

3 month trend: -5.27%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDS6673BZ.

Upverter

Datasheet7 pages3 years ago

Technical Drawing1 page6 years ago

element14 APAC

IHS

Master Electronics

Future Electronics

Inventory History

3 month trend:

-5.27%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiFDS6673BZ

onsemiFDS6673BZ-F085

Price @ 1000

$ 0.525

$ 0.464

Stock

693,055

231,397

Authorized Distributors

Mount

Surface Mount

Case/Package

SOIC

Drain to Source Voltage (Vdss)

-30 V

30 V

Continuous Drain Current (ID)

14.5 A

Threshold Voltage

-1.9 V

Rds On Max

7.8 mΩ

Gate to Source Voltage (Vgs)

25 V

Power Dissipation

1 W

2.5 W

Input Capacitance

4.7 nF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-03-02

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDS6673BZ provided by its distributors.

P-Channel PowerTrench® MOSFET -30V, 14.5A, 7.8mΩ

onsemi

P-Channel 30 V 7.8 mOhm PowerTrench Mosfet - SOIC-8

Future Electronics

ON SEMICONDUCTOR - FDS6673BZ - MOSFET Transistor, P Channel, 14.5 mA, -30 V, 0.0065 ohm, 10 V, 1.9 V

Fly-Wing Technology

Small Signal Field-Effect Transistor, 14.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Rebound Electronics

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Fairchild Semiconductor

MOSFET, P CH, 30V, 14.5A, 8SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-14.5A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.9V; Power Dissipation Pd:1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

Farnell