onsemi FDP8870-F085
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-07-13
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2018-09-30
LTD Date2019-03-31
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
Related Parts
InfineonIRLB8743PBF
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
InfineonIRL3713PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 260A;TO-220AB;PD 330W;-55de
Descriptions
Descriptions of onsemi FDP8870-F085 provided by its distributors.
Trans MOSFET N-CH 30V 19A Automotive 3-Pin(3+Tab) TO-220AB Rail
Power Field-Effect Transistor, 19A I(D), 30V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N-Channel PowerTrench® 30V, 156A, 4.1mW
MOSFET N-CH 30V 19A/156A TO220-3
FDP8870_F085 Fairchild/ON Semiconductor
Nmos To220 30V 4.1 Mohm / Tube
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technical Specifications
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)19 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance4.6 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time46 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.2 nF
Max Operating Temperature175 °C
Max Power Dissipation160 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation160 W
Rds On Max4.1 mΩ
Rise Time105 ns
Turn-Off Delay Time70 ns
Turn-On Delay Time11 ns
Compliance
Environmental Classification
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements