Infineon IRLB8743PBF

Name: Infineon IRLB8743PBF
Brand: Infineon
SKU: IRLB8743PBF

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

$ 0.659

EOL

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Distributor		SKU		Min	Pkg
Newark		IRLB8743PBF	2,085	1		1.290	1.030	0.694	0.694	0.694
Arrow Electronics	2	IRLB8743PBF	13	1		1.110	0.917	0.917	0.917	0.917
Rochester Electronics	2	IRLB8743PBF	8,334					0.753	0.625	0.557	9h
DigiKey		IRLB8743PBF-ND	2,457	1	Tube	2.230	1.422	0.963	0.702	0.556
Future Electronics	2	IRLB8743PBF	0	40	Tube			0.590	0.565	0.530

Inventory History

3 month trend: -12.03%

CAD Models

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Alternate Parts

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Datasheets & Documents

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IHS

Datasheet9 pages17 years ago

Newark

Inventory History

3 month trend:

-12.03%

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-04-22

Lifecycle StatusEOL (Last Updated: 3 weeks ago)

LTB Date2026-09-30

LTD Date2027-03-31

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Descriptions

Descriptions of Infineon IRLB8743PBF provided by its distributors.

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Single N-Channel 30 V 8.7 mOhm 36 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 140 W

Distrelec

Trans MOSFET N-CH 30V 150A 3-Pin(3+Tab) TO-220AB Tube

Avnet

Power Field-Effect Transistor, 78A I(D), 30V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

MOSFET, N CH, 30V, 78A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:150A; Package / Case:TO-220AB; Power Dissipation Pd:140W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon