onsemi FDMS8090
$ 6.794
Production
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2012-09-21
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descriptions
Descriptions of onsemi FDMS8090 provided by its distributors.
100V Symmetrical Dual N-Channel PowerTrench® MOSFET 40A, 13mΩ
Dual N-Ch MOSFET 100V 2.2W 250µA@4V 27nC@10V 13mΩ@10A,10V 10A 1.8nF@50V SMD 6mm×5mm×800μm
Transistor MOSFET Array Dual N-CH 100V 40A 8-Pin Power 56 T/R
Avnet Japan
This device includes two fast switching (Qgd minimized) 100V N-Channel MOSFETs in a dual Power 56 (5 mm X 6 mm MLP) package. The package is enhanced for exceptional thermal performance.
MOSFET, N-CH, 100V, 10A, WDFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.013ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Powe
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Pins8
Number of Terminals4
Weight250 mg
Technical
Continuous Drain Current (ID)10 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance13 mΩ
Drain to Source Voltage (Vds)100 V
Element ConfigurationDual
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.8 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation59 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingTape and Reel
Power Dissipation2.2 W
Rds On Max13 mΩ
Rise Time4.6 ns
Schedule B8541290080
Turn-Off Delay Time17.4 ns
Turn-On Delay Time10.6 ns
Dimensions
Height800 µm
Length5 mm
Width6 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Compliance Statements