onsemi FDMD82100L
EOL
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2014-05-28
Lifecycle StatusEOL (Last Updated: 2 days ago)
LTB Date2022-09-30
LTD Date2023-03-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
Descriptions
Descriptions of onsemi FDMD82100L provided by its distributors.
Transistor MOSFET Array Dual N-CH 100V 24A 12-Pin PQFN T/R
Avnet Japan
Dual N-Channel PowerTrench® MOSFET 100V, 24A, 19.5mΩ
Trans MOSFET N-CH Si 100V 7A 12-Pin PQFN EP T/R
This device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technical Specifications
Physical
Case/Package100
MountSurface Mount
Number of Pins12
Number of Terminals12
Weight82.3188 mg
Technical
Continuous Drain Current (ID)7 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance19.5 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationDual
Fall Time2.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.585 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation38 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingTape & Reel (TR)
Power Dissipation38 W
Rds On Max19.5 mΩ
Rise Time2.8 ns
Turn-Off Delay Time21 ns
Turn-On Delay Time7.9 ns
Dimensions
Height800 µm
Compliance
Environmental Classification
China RoHSNon-Compliant
REACH SVHCNo
RoHSCompliant
Compliance Statements