onsemi FDG6318PZ
Obsolete
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-03-06
Lifecycle StatusObsolete (Last Updated: 2 days ago)
LTB Date2021-02-12
LTD Date2021-08-12
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)
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Descriptions
Descriptions of onsemi FDG6318PZ provided by its distributors.
Transistor MOSFET Array Dual P-CH 20V 0.5A 6-Pin SC-70 T/R
Avnet Japan
Digital FET -20 V, Dual P-Channel, -0.5 A, 780 mΩ
Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Trans MOSFET P-CH 20V 0.5A 6-Pin SC-88 T/R
20V/12V 780Mo Pch Dual Rohs Compliant: Yes
MOSFET, DUAL P-CH, -20V, -0.5A, SC-70-6; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -500mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.58ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Vol
These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s especially tailored to minimize on-state resistance. This device has been designed especially for bipolar digital transistors and small signal MOSFETS
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technical Specifications
Physical
Case/PackageSC
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight28 mg
Technical
Continuous Drain Current (ID)500 mA
Current Rating-500 mA
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance780 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationDual
Fall Time13 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance85.4 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation300 mW
Rds On Max780 mΩ
Resistance780 MΩ
Rise Time13 ns
Schedule B8541210080
Turn-Off Delay Time40 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.1 mm
Length2 mm
Width1.25 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements