onsemi FDG6301N-F085
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | FDG6301N_F085 | 0 | 3K | Tape & Reel | ||||||||
| Farnell | FDG6301N-F085 | 0 | 5 | Cut Tape | 1h | |||||||
| Win Source | WS-FDG6301N_F085 | 119,960 | 250 | 2h | ||||||||
| Worldway Electronics | FDG6301N_F085 | 26,425 | 7 | 6h | ||||||||
| Aztech | FDG6301N-F085 | 10,362 | 2d |
CAD Models
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| source | eCAD | mCAD | FILES |
|---|---|---|---|
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 SnapEDA | Footprint | Download |
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.158
Stock
596,588
1,654,719
Authorized Distributors
2
6
Mount
Surface Mount
Surface Mount
Case/Package
SC
SC
Drain to Source Voltage (Vdss)
25 V
25 V
Continuous Drain Current (ID)
220 mA
220 mA
Threshold Voltage
850 mV
850 mV
Rds On Max
4 Ω
4 Ω
Gate to Source Voltage (Vgs)
8 V
8 V
Power Dissipation
300 mW
300 mW
Input Capacitance
9.5 pF
9.5 pF
Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2008-10-29
Lifecycle StatusObsolete (Last Updated: 6 days ago)
LTB Date2021-07-05
LTD Date2022-07-05
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 6 days ago)
Descriptions
Descriptions of onsemi FDG6301N-F085 provided by its distributors.
Mosfet Array 2 N-Channel (Dual) 25V 220mA 300mW Surface Mount SC-70-6
Dual N-Channel Digital FET 25 V, 0.22 A, 4 Ω
N-Channel Power Mosfet/Tape Reel |Onsemi FDG6301N_F085
MOSFET, DUAL N-CH, 25V, 0.22A, 150DEG C
Small Signal Field-Effect Transistor, 0.22A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FDG6301N_F085 Fairchild/ON Semiconductor
MOSFET, DUAL N-CH, 25V, 0.22A, 150DEG C; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 220mA; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 2.6ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technical Specifications
Physical
Case/PackageSC
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight28 mg
Technical
Continuous Drain Current (ID)220 mA
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance4 Ω
Drain to Source Voltage (Vdss)25 V
Element ConfigurationDual
Fall Time3.2 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance9.5 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingTape and Reel
Power Dissipation300 mW
Rds On Max4 Ω
Rise Time4.5 ns
Schedule B8541210080
Threshold Voltage850 mV
Turn-Off Delay Time4 ns
Turn-On Delay Time5 ns
Dimensions
Height1.1 mm
Compliance
Environmental Classification
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements