Infineon IRLR3114ZPBF

Name: Infineon IRLR3114ZPBF
Brand: Infineon
SKU: IRLR3114ZPBF

Single N-Channel 40 V 4.9 mOhm 40 nC HEXFET® Power Mosfet - TO-252AA

$ 2.07

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRLR3114ZPBF	0	5	Bulk		2.290	2.070	2.070	2.070	7h
Farnell	IRLR3114ZPBF	0	1		0.996*	0.996*	0.996*	0.996*	0.996*	18h
Win Source	WS-IRLR3114ZPBF	80,920	90				0.672	0.448	0.448	19h
Worldway Electronics	IRLR3114ZPBF	12,693	7	Tube		0.292	0.286	0.275	0.270	19h
Fly-Wing Technology	IRLR3114ZPBF	70,368			0.553	0.454	0.440	0.411	0.411	1d

CAD Models

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Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLR3114ZPBF.

IHS

Datasheet12 pages15 years ago

Datasheet11 pages15 years ago

element14 APAC

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Alternate Parts

This Part

Alternate Parts

InfineonIRLR3114ZPBF

InfineonIRLR3114ZTRPBF

Price @ 1000

$ 2.07

$ 0.537

Stock

625,075

789,969

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

40 V

Continuous Drain Current (ID)

42 A

Threshold Voltage

2.5 V

1 V

Rds On Max

4.9 mΩ

Gate to Source Voltage (Vgs)

16 V

Power Dissipation

140 W

Input Capacitance

3.81 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-05-09

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

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Descriptions

Descriptions of Infineon IRLR3114ZPBF provided by its distributors.

Single N-Channel 40 V 4.9 mOhm 40 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

40V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 42A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

Benefits: Advanced Process Technology; Ultra Low On-Resistance; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Logic Level | Target Applications: AC-DC; Battery Operated Drive

Infineon

MOSFET, N D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Charge Qrr @ Tj = 25°C Typ:40nC; Current Id Max:42A; Package / Case:DPAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:500A; Termination Type:SMD; Voltage Vgs Max:16V; Voltage Vgs Rds on Measurement:10V

element14 APAC