onsemi FDD7N60NZTM

Name: onsemi FDD7N60NZTM
Brand: onsemi
SKU: FDD7N60NZTM

N-Channel Power MOSFET, UniFETTM II, 600 V, 5.5 A, 1.25 Ω, DPAK

$ 1.282

EOL

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Distributor	SKU		Min	Pkg
Avnet	FDD7N60NZTM	2,500	521					1.282	1.200	10h
Flip Electronics	FDD7N60NZTM	2,500								>1wk
Component Stockers USA	FDD7N60NZTM	425			0.550	0.550	0.520	0.520	0.520	>1wk
Win Source	WS-FDD7N60NZTM	6,700	85				0.593	0.396	0.396	9h
Worldway Electronics	FDD7N60NZTM	21,769	7	Tape & Reel		0.237	0.233	0.224	0.219	1d

Inventory History

3 month trend: +0.00%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDD7N60NZTM.

IHS

Datasheet9 pages12 years ago

Datasheet0 pages0 years ago

Future Electronics

onsemi

Fairchild Semiconductor

Inventory History

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2012-09-26

Lifecycle StatusEOL (Last Updated: 5 days ago)

LTB Date2022-12-30

LTD Date2023-06-30

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)

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Descriptions

Descriptions of onsemi FDD7N60NZTM provided by its distributors.

N-Channel Power MOSFET, UniFETTM II, 600 V, 5.5 A, 1.25 Ω, DPAK

onsemi

MOSFET, N-CH, 600V, 5.5A, TO-251AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1.05oh; Available until stocks are exhausted Alternative available

Farnell

N-CHANNEL UNIFET II MOSFET Power Field-Effect Transistor, 5.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Fairchild Semiconductor