onsemi FDD5N60NZTM

Name: onsemi FDD5N60NZTM
Brand: onsemi
SKU: FDD5N60NZTM

N-Channel Power MOSFET, UniFETTM II, 600 V, 4 A, 2 Ω, DPAK

$ 0.587

Production

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Future Electronics	2	FDD5N60NZTM	2,500	2500	Tape & Reel					0.485
Newark	2	FDD5N60NZTM	4,063	1	Cut Tape	1.900	1.280	0.914	0.710	0.710
Arrow Electronics		FDD5N60NZTM	2,500	2500						0.446
Verical	2	FDD5N60NZTM	2,500	2500						0.447
Rochester Electronics		FDD5N60NZTM	2,201					0.607	0.504	0.449	11h

Inventory History

3 month trend: -33.66%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDD5N60NZTM.

Upverter

Technical Drawing1 page3 years ago

IHS

Master Electronics

onsemi

Fairchild Semiconductor

Inventory History

3 month trend:

-33.66%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiFDD5N60NZTM

onsemiNDD04N60ZT4G

Price @ 1000

$ 0.587

$ 0.86

Stock

854,788

1,168,930

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

600 V

Continuous Drain Current (ID)

4 A

2.6 A

Threshold Voltage

3.9 V

Rds On Max

2 Ω

Gate to Source Voltage (Vgs)

25 V

30 V

Power Dissipation

83 W

Input Capacitance

600 pF

640 pF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2012-09-26

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDD5N60NZTM provided by its distributors.

N-Channel Power MOSFET, UniFETTM II, 600 V, 4 A, 2 Ω, DPAK

onsemi

UNIFET2 600V N-CHANNEL MOSFET, DPAK - TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB

Newark

Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Semicontronic

MOSFET, N-CH, 600V, 4A, 83W, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1.65ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po

Farnell

UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Fairchild Semiconductor