onsemi FDD5N50NZTM

Name: onsemi FDD5N50NZTM
Brand: onsemi
SKU: FDD5N50NZTM

N-Channel Power MOSFET, UniFETTM II, 500 V, 4 A, 1.5 Ω, DPAK

$ 0.626

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Distributor		SKU		Min	Pkg
Newark	2	FDD5N50NZTM	4,568	1	Cut Tape	1.720	1.140	0.814	0.627	0.627
Future Electronics		FDD5N50NZTM	2,500	2500	Tape & Reel					0.425
DigiKey	3	FDD5N50NZTMCT-ND	4,788	1	Cut Tape	1.730	1.095	0.732	0.525	0.525
Onlinecomponents.com		FDD5N50NZTM	0	625	Bulk				0.626	0.429
Avnet		FDD5N50NZTM	0	2500						0.412	3h

Inventory History

3 month trend: +59.21%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDD5N50NZTM.

IHS

Datasheet8 pages12 years ago

Master Electronics

onsemi

Fairchild Semiconductor

Inventory History

3 month trend:

+59.21%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2009-11-06

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDD5N50NZTM provided by its distributors.

N-Channel Power MOSFET, UniFETTM II, 500 V, 4 A, 1.5 Ω, DPAK

onsemi

Single N-Channel 500 V 1.5 Ohm 12 nC 62 W Silicon SMT Mosfet - TO-252-3

Future Electronics

Power MOSFET, N Channel, 500 V, 4 A, 1.38 ohm, TO-252 (DPAK), Surface Mount

Avnet

Trans MOSFET N-CH 500V 4A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 500V DPAK

Win Source

500 V, 4 A, 1.5 OHM N-CHANNEL UNIFET II MOSFET Power Field-Effect Transistor, 4A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

ComSIT Distribution GmbH

UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Fairchild Semiconductor