STMicroelectronics STD5N52K3
$ 0.615
Production
Inventory History
3 month trend: -1.30%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STD5N52K3.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-01-05
Lifecycle StatusProduction (Last Updated: 4 months ago)
Related Parts
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N-channel 500 V, 1.22 Ohm typ., 4.4 A Zener-protected SuperMESH Power MOSFET in DPAK package
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N-CHANNEL 500V - 0.93͐2;6; - 5.6A DPAK Zener-Protected SuperMESH™ MOSFET
Descriptions
Descriptions of STMicroelectronics STD5N52K3 provided by its distributors.
N-channel 525 V, 1.2 Ohm typ., 4.4 A SuperMESH3(TM) Power MOSFET in DPAK package
STMICROELECTRONICS STD5N52K3 MOSFET Transistor, N Channel, 4.4 A, 525 V, 1.2 ohm, 10 V, 3.75 V
STD5N52K3 N-channel MOSFET Transistor, 4.4 A, 525 V, 3-Pin TO-252
Trans MOSFET N-CH 525V 4.4A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 525V 4.4A DPAK
Power MOSFET, N Channel, 525 V, 4.4 A, 1.2 ohm, TO-252 (DPAK), Surface Mount
Power Field-Effect Transistor, 4.4A I(D), 525V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N CH, 525V, 4.4A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.4A; Drain Source Voltage Vds:525V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:70W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -1.30%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)4.4 A
Drain to Source Breakdown Voltage525 V
Drain to Source Resistance1.5 Ω
Drain to Source Voltage (Vdss)525 V
Fall Time16 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance545 pF
Max Operating Temperature150 °C
Max Power Dissipation70 W
Min Breakdown Voltage525 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation70 W
Rds On Max1.5 Ω
Resistance1.5 Ω
Rise Time11 ns
Threshold Voltage3.75 V
Turn-Off Delay Time29 ns
Turn-On Delay Time9 ns
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STD5N52K3.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant