onsemi FDC602P

Name: onsemi FDC602P
Brand: onsemi
SKU: FDC602P

P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -5.5A, 35mΩ

$ 0.303

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet	2	FDC602P	578	1786						0.361	3d
Newark	2	FDC602P	34,110	5	Cut Tape		0.642	0.419	0.372	0.372
Verical	3	FDC602P	2,990	7			0.486	0.370	0.274	0.198
Arrow Electronics	2	FDC602P	2,990	1		0.708	0.486	0.370	0.274	0.274
Rochester Electronics		FDC602P	35,449					0.272	0.225	0.201	16h

Inventory History

3 month trend: -20.98%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDC602P.

Newark

Datasheet0 pages0 years ago

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Inventory History

3 month trend:

-20.98%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiFDC602P

onsemiFDC604P

Price @ 1000

$ 0.303

$ 0.213

Stock

1,291,753

1,394,240

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-23-6

Drain to Source Voltage (Vdss)

-20 V

Continuous Drain Current (ID)

5.5 A

Threshold Voltage

-900 mV

-700 mV

Rds On Max

35 mΩ

33 mΩ

Gate to Source Voltage (Vgs)

12 V

8 V

Power Dissipation

800 mW

1.6 W

Input Capacitance

1.456 nF

1.926 nF

Supply Chain

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1999-12-28

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDC602P provided by its distributors.

P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -5.5A, 35mΩ

onsemi

Transistor MOSFET P-Channel 20 Volt 5.5A 6-Pin SuperSOT

Jameco

P-Channel 20 V 35 mohm 2.5 V PowerTrench Specified Mosfet SSOT-6

Future Electronics

This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

Fairchild Semiconductor

MOSFET, P, SMD, SSOT-6; Transistor Polarity:P Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV; Power Dissipation Pd:1.6W; Transistor Case Style:SSOT; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:-5.5A; Package / Case:SSOT-6; Power Dissipation Pd:1.6W; Termination Type:SMD; Voltage Vds:-20V; Voltage Vds Typ:-20V; Voltage Vgs Max:-900mV; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Max:-1.5V

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