onsemi FDC637BNZ
$ 0.151
Production
Inventory History
3 month trend: +58.78%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2007-10-29
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Related Parts
Descriptions
Descriptions of onsemi FDC637BNZ provided by its distributors.
N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.2A, 24mΩ
N-Channel 20 V 24 mOhm 2.5V Specified PowerTrench Mosfet SSOT-6
TAPE REEL/20V, 6.2A, 24 m ohm,NCH SPECIFIED POWER TRENCH MOSFET
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +58.78%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-23-6
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight36 mg
Technical
Continuous Drain Current (ID)6.2 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance24 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time6 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance895 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs800 mV
Number of Channels1
Number of Elements1
Power Dissipation800 mW
Rds On Max24 mΩ
Resistance24 MΩ
Rise Time6 ns
Schedule B8541290080
Threshold Voltage800 mV
Turn-Off Delay Time22 ns
Turn-On Delay Time8 ns
Dimensions
Height1.1 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements