onsemi FCH150N65F-F155

Name: onsemi FCH150N65F-F155
Brand: onsemi
SKU: FCH150N65F-F155

N-Channel Power MOSFET, SUPERFET® II, FRFET®, 650 V, 24 A, 150 mΩ, TO-247

$ 3.7

EOL

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Newark		FCH150N65F-F155	504	1		9.010	5.830	5.110	5.100	5.100
Rochester Electronics		FCH150N65F-F155	3,207					3.310	2.960	2.780	15h
Verical	2	FCH150N65F_F155	2,787	87				4.138	3.700	3.475
Arrow Electronics		FCH150N65F-F155	480	1		3.041	3.041	3.041	3.041	3.041
DigiKey		FCH150N65F-F155-ND	262	1	Tube	8.230	8.230	4.769	4.009	4.009

Inventory History

3 month trend: -1.46%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FCH150N65F-F155.

IHS

Datasheet10 pages5 years ago

Master Electronics

onsemi

Farnell

Fairchild Semiconductor

Inventory History

3 month trend:

-1.46%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-07-01

Lifecycle StatusEOL (Last Updated: 6 days ago)

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 6 days ago)

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Descriptions

Descriptions of onsemi FCH150N65F-F155 provided by its distributors.

N-Channel Power MOSFET, SUPERFET® II, FRFET®, 650 V, 24 A, 150 mΩ, TO-247

onsemi

Power Field-Effect Transistor, 24A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

IHS

MOSFET N-CH 650V 24A TO247 / N-Channel 650 V 24A (Tc) 298W (Tc) Through Hole TO-247-3

Win Source

SUPERFET2 650V, 150 MOHM, FRFET; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.133ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Powe

Farnell

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.

Fairchild Semiconductor