onsemi FCD5N60TM

Name: onsemi FCD5N60TM
Brand: onsemi
SKU: FCD5N60TM

N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 4.6 A, 950 mΩ, DPAK

$ 0.879

Production

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor		SKU		Min	Pkg
Newark	2	FCD5N60TM	3,710	1	Cut Tape	2.040	1.520	1.240	1.120	1.120
Verical	2	FCD5N60TM	139	8			0.849	0.811	0.811	0.811
Arrow Electronics		FCD5N60TM	139	1		0.928	0.849	0.811	0.811	0.811
Rochester Electronics		FCD5N60TM	1,320					1.010	0.838	0.747	2d
DigiKey	3	FCD5N60TMCT-ND	4,119	1	Cut Tape	2.750	1.774	1.215	0.909	0.909

Inventory History

3 month trend: +124%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FCD5N60TM.

IHS

Datasheet6 pages11 years ago

Newark

Upverter

onsemi

Fairchild Semiconductor

Inventory History

3 month trend:

+124%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiFCD5N60TM

onsemiFCD5N60TM-WS

Price @ 1000

$ 0.879

$ 0.978

Stock

321,630

181,914

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

600 V

Continuous Drain Current (ID)

4.6 A

7 A

Threshold Voltage

5 V

Rds On Max

950 mΩ

Gate to Source Voltage (Vgs)

30 V

Power Dissipation

54 W

Input Capacitance

600 pF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2006-07-11

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FCD5N60TM provided by its distributors.

N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 4.6 A, 950 mΩ, DPAK

onsemi

N-Channel 600 V 0.95 Ohm Surface Mount SuperFET Mosfet - TO-252-3

Future Electronics

Trans MOSFET N-CH 600V 4.6A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 600V 4.6A DPAK

Win Source

MOSFET, N, 650V, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.6A; Drain Source Voltage Vds:650V; On Resistance Rds(on):950mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:54W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Current Id Max:4.6A; Package / Case:DPAK; Power Dissipation Pd:54W; Power Dissipation Pd:54W; Pulse Current Idm:13.8A; Termination Type:SMD; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V

element14 APAC

SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Fairchild Semiconductor