onsemi FCA36N60NF

Name: onsemi FCA36N60NF
Brand: onsemi
SKU: FCA36N60NF

Power MOSFET, N-Channel, SUPREMOS®, FRFET®, 600 V, 34.9 A, 95 mΩ, TO-3P

$ 4.811

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min
Rochester Electronics	FCA36N60NF	425				4.490	4.020	3.780	2h
Flip Electronics	FCA36N60NF	1,056							21h
Avnet	FCA36N60NF	0	193				4.811	4.762	1d
Farnell	FCA36N60NF	233	1	8.561*	6.492*	5.416*	5.416*	5.416*	2h
element14 APAC	FCA36N60NF	233	1	5.467*	5.358*	5.358*	5.358*	5.358*	16h

Inventory History

3 month trend: +0.00%

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FCA36N60NF.

Farnell

Datasheet0 pages0 years ago

Datasheet8 pages15 years ago

IHS

onsemi

Fairchild Semiconductor

element14 APAC

Inventory History

3 month trend:

+0.00%

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2011-03-07

Lifecycle StatusObsolete (Last Updated: 5 days ago)

LTB Date2022-09-29

LTD Date2023-03-29

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)

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Descriptions

Descriptions of onsemi FCA36N60NF provided by its distributors.

Power MOSFET, N-Channel, SUPREMOS®, FRFET®, 600 V, 34.9 A, 95 mΩ, TO-3P

onsemi

N-CHANNEL SUPREMOS FRFET MOSFET Power Field-Effect Transistor, 34.9A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET, N CH, 600V, 34.9A, TO3PN; Transistor Polarity:N Channel; Continuous Drain Current Id:34.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.7V; Power Dissipation Pd:312W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3PN; No. of Pins:3; SVHC:No SVHC (18-Jun-2012)

Farnell

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SupreMOS FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.

Fairchild Semiconductor