STMicroelectronics STW43NM60ND
$ 6.124
Obsolete
Price and Stock
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SKU
Min
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Inventory History
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CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW43NM60ND.
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-02-06
Lifecycle StatusObsolete (Last Updated: 1 month ago)
Related Parts
STMicroelectronicsSTW48NM60N
N-channel 600 V, 0.055 Ohm typ., 44 A MDmesh(TM) II Power MOSFET in TO-247 package
STMicroelectronicsSTW42N65M5
N-channel 650 V, 0.070 Ohm typ., 33 A MDmesh M5 Power MOSFET in TO-247 package
STMicroelectronicsSTW48N60DM2
N-channel 600 V, 0.065 Ohm typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 long leads package
onsemiFCH125N60E
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 29 A, 125 mΩ, TO-247
Descriptions
Descriptions of STMicroelectronics STW43NM60ND provided by its distributors.
N-channel 600 V, 0.075 Ohm, 35 A, TO-247 FDmesh(TM) Power MOSFET (with fast diode)
e200z650 MPC56xx Qorivva Microcontroller IC 32-Bit 116MHz 2MB (2M x 8) FLASH 208-MAPBGA (17x17)
N-Channel 600 V 88 mO Flange Mount FDmesh Power MOSFET - TO-247
Power Field-Effect Transistor, 35A I(D), 600V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MOSFET, N CH, 600V, 35A, TO 247; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:255W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (18-Jun-2012)
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
No data available
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)35 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance88 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time50 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance4.3 nF
Max Operating Temperature150 °C
Max Power Dissipation255 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation255 W
Rds On Max88 mΩ
Resistance88 mΩ
Rise Time40 ns
Threshold Voltage4 V
Turn-Off Delay Time120 ns
Turn-On Delay Time30 ns
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW43NM60ND.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant