onsemi BS170

Name: onsemi BS170
Brand: onsemi
SKU: BS170

Transistor, Mosfet, N-channel, Field Effect, Enhancement Mode, 60V, 0.5A TO-92

$ 0.078

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet	2	BS170	718	10K						0.071	5d
Future Electronics		BS170	18,478	200	Bulk				0.096	0.087
Newark	2	BS170	33,988	5			0.357	0.237	0.168	0.129
Verical	5	BS170	8,645	95				0.111	0.082	0.065
Arrow Electronics	3	BS170	38,438	1		0.210	0.133	0.102	0.076	0.066

Inventory History

3 month trend: +9.80%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi BS170.

IHS

Datasheet11 pages4 years ago

Datasheet2 pages25 years ago

element14 APAC

Upverter

Electro Sonic

Master Electronics

Inventory History

3 month trend:

+9.80%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiBS170

onsemiBS170G

Price @ 1000

$ 0.078

$ 0.46

Stock

2,293,868

190,669

Authorized Distributors

Mount

Through Hole

Case/Package

TO-92

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

500 mA

Threshold Voltage

2.1 V

2 V

Rds On Max

5 Ω

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

830 mW

350 mW

Input Capacitance

24 pF

60 pF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.95

Introduction Date1989-06-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi BS170 provided by its distributors.

TRANSISTOR, MOSFET, N-CHANNEL, FIELD EFFECT, ENHANCEMENT MODE, 60V, 0.5A TO-92

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Transistor BS170 MOSFET N-Channel 60 Volt 0.5 Amp TO-92

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FAIRCHILD SEMICONDUCTOR BS170.....MOSFET Transistor, N Channel, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

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MOSFET, N CH, 60V, 0.5A, TO-92; Transistor Polarity: N Channel; Continuous Drain Current Id: 500mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 1.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.1V; Powe

Farnell

This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 500 mA DC. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Fairchild Semiconductor