Descriptions of onsemi BCP69T1G provided by its distributors.
TRANSISTOR, BIPOLAR, SI, PNP, HIGH CURRENT, MEDIUM POWER, VCEO -20VDC, IC -1A, PD 1.5W
20V 1.5W 50@5.0mA,10V 1A PNP SOT-223-4 Bipolar (BJT) ROHS
Bipolar Transistors (BJT); BCP69T1G; ON SEMICONDUCTOR; PNP; 4; 20 V; 1 A
BCP Series 20 V 1 A Surface Mount NPN Silicon Epitaxial Transistor - SOT-223
20V 1.5W 85@500mA,1V 1A PNP SOT-223-4 Bipolar Transistors - BJT ROHS
onsemi PNP Transistor, SOT-223 (SC-73), SMD, -1A Ic, -20V Vce
PNP SILICON EPITAXIAL TRANSISTOR Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin
Trans GP BJT PNP 20V 1A 1500mW 4-Pin(3+Tab) SOT-223 T/R
PNP Bipolar Junction Transistor
Bipolar (BJT) single-bipolar transistor
This PNP Silicon Epitaxial Transistor is designed for use in low voltage high current applications. The device is housed in the SOT-223-4 package which is designed for medium power surface mount applications.
TRANSISTOR, PNP, SOT-223; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -20V; Transition Frequency ft: 60MHz; Power Dissipation Pd: 1.5W; DC Collector Current: -1A; DC Current Gain hFE: 375hFE; Transistor Case