NXP Semiconductors MRFE6VS25NR1
$ 35.428
EOL
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | MRFE6VS25NR1 | 0 | 500 | Tape & Reel | ||||||||
| RFMW | MRFE6VS25NR1 | 0 | 1 | 23h | ||||||||
| Future Electronics | MRFE6VS25NR1 | 0 | 500 | Tape & Reel | ||||||||
| Avnet | MRFE6VS25NR1 | 0 | 500 | 5d | ||||||||
| Arrow Electronics | MRFE6VS25NR1 | 0 | 500 |
Datasheets & Documents
Download datasheets and manufacturer documentation for NXP Semiconductors MRFE6VS25NR1.
CAD Models
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Supply Chain
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00
Introduction Date2012-06-14
Lifecycle StatusEOL (Last Updated: 3 weeks ago)
LTB Date2026-09-30
LTD Date2027-09-30
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Wideband RF Power LDMOS Transistor, 1.8 - 2000 MHz, 25 W, 50 V/ REEL RoHS Compliant: Yes
Descriptions
Descriptions of NXP Semiconductors MRFE6VS25NR1 provided by its distributors.
RF Power Transistor,1.8 to 2000 MHz, 25 W, Typ Gain in dB is 25.5 @ 512 MHz, 50 V, LDMOS, SOT1732
MRFE6VS Series 133 V 512 MHz RF Power LDMOS Transistor - TO-270-2
Wideband RF Power LDMOS Transistor, 1.8-2000 MHz, 25 W, 50 V, FM2F
NXP Semiconductors SCT
Transistor RF FET N-CH 133V 1.8MHz to 2000MHz 2-Pin TO-270 T/R
Avnet Japan
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, N-Channel, Metal-oxide Semiconductor FET
RF MOSFET Transistors VHV6E 25W50V TO270-2
LDMOS, RF, 25W, TO-270; Transistor Type:RF MOSFET; Drain Source Voltage Vds:133V DC; Power Dissipation Pd:25W; Operating Frequency Range:1.8MHz to 2GHz; Operating Temperature Min:-40°C; Operating Temperature Max:150°C; No. of Pins:2
Manufacturer Aliases
NXP Semiconductors has several brands around the world that distributors may use as alternate names. NXP Semiconductors may also be known as the following names:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
Technical Specifications
Physical
Case/PackageTO-270-2
MountSurface Mount
Number of Terminals2
Weight529.540742 mg
Technical
Drain to Source Breakdown Voltage142 V
Drain to Source Voltage (Vdss)133 V
Frequency512 MHz
Gain24 dB
Gate to Source Voltage (Vgs)10 V
Max Frequency200 MHz
Max Junction Temperature (Tj)225 °C
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage133 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
Output Power25 W
Power Dissipation25 W
Schedule B8541290080
Test Current10 mA
Test Voltage50 V
Threshold Voltage1.5 V
Voltage Rating133 V
Dimensions
Height2.08 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for NXP Semiconductors MRFE6VS25NR1.
Compliance
Environmental Classification
China RoHSNon-Compliant
REACH SVHCNo
RoHSCompliant
Compliance Statements