NXP Semiconductors MRF101AN
$ 30.355
EOL
Inventory History
3 month trend: -77.90%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for NXP Semiconductors MRF101AN.
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00
Introduction Date2018-11-01
Lifecycle StatusEOL (Last Updated: 3 weeks ago)
LTB Date2026-09-30
LTD Date2027-09-30
Descriptions
Descriptions of NXP Semiconductors MRF101AN provided by its distributors.
RF Power Transistor, 1.8 to 250 MHz, 100 W CW, Typ gain in dB is 23 @ 50 MHz, TO-220-3L, LDMOS
TO-220-3 LDMOS ROHS3Compliant RF Mosfet 100mA 115W 21.1dB 1.8MHz~250MHz
MRF Series 50 V 250 MHz 100 W CW Wideband RF Power LDMOS Transistor - TO220-3
Trans RF MOSFET N-CH 133V 3-Pin(3+Tab) TO-220 Tube
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-220AB
Rf Fet Transistor, 133V, 182W, To-220; Drain Source Voltage Vds:133V; Continuous Drain Current Id:-; Power Dissipation Pd:182W; Operating Frequency Min:1.8Mhz; Operating Frequency Max:250Mhz; Rf Transistor Case:To-220; No. Of Rohs Compliant: Yes |Nxp MRF101AN
Manufacturer Aliases
NXP Semiconductors has several brands around the world that distributors may use as alternate names. NXP Semiconductors may also be known as the following names:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
Inventory History
3 month trend: -77.90%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Number of Terminals3
Technical
Drain to Source Breakdown Voltage133 V
Drain to Source Voltage (Vdss)133 V
Gate to Source Voltage (Vgs)10 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Min Breakdown Voltage133 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
Power Dissipation182 W
Schedule B8541290080
Dimensions
Height19.91 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for NXP Semiconductors MRF101AN.