NXP Semiconductors AFT05MS031NR1
$ 12.95
EOL
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | AFT05MS031NR1CT-ND | 135 | 1 | Cut Tape | ||||||||
| Arrow Electronics | AFT05MS031NR1 | 325 | 1 | |||||||||
| Rochester Electronics | AFT05MS031NR1 | 1 | 8h | |||||||||
| Newark | AFT05MS031NR1 | 0 | 500 | Cut Tape | ||||||||
| RFMW | AFT05MS031NR1 | 0 | 1 | 10h |
Inventory History
3 month trend: -20.08%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for NXP Semiconductors AFT05MS031NR1.
CAD Models
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| source | eCAD | mCAD | FILES |
|---|---|---|---|
 SnapEDA | Footprint | Download | |
 Ultra Librarian | SymbolFootprint | Download |
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Supply Chain
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00
Introduction Date2012-05-25
Lifecycle StatusEOL (Last Updated: 1 month ago)
LTB Date2026-09-30
LTD Date2027-09-30
Related Parts
NXP SemiconductorsAFT09MS031NR1
AFT09MS Series 40 V 870 MHz N-Channel RF Power LDMOS Transistor - TO-270-2
NXP SemiconductorsMW6S010GNR1
RF Power Transistor,450 to 1500 MHz, 10 W, Typ Gain in dB is 18 @ 960 MHz, 28 V, LDMOS, SOT1731
Descriptions
Descriptions of NXP Semiconductors AFT05MS031NR1 provided by its distributors.
RF Power Transistor, 0.0018 to 0.52 GHz, 31 W, 17.7 dB, 13.6 V, SOT1732, LDMOS
AFT05MSx Series 40 V 520 MHz N-Channel RF Power LDMOS Transistor - TO-270-2
Airfast Wideband RF Power LDMOS Transistor, 136-520 MHz, 31 W, 13.6 V, FM2F
NXP Semiconductors SCT
294W 12V 2.6V 50nC 1N 40V 65m¦¸@ 4.5V,3.7A 1.2A 109pF@ 13.6V TO-270-2 2.08mm
Transistor RF FET N-CH 40V 136MHz to 520MHz 2-Pin TO-270 T/R
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, N-Channel, Metal-oxide Semiconductor FET
IC XPND 400KHZ I2C SMBUS 16TVSOP
LDMOS, RF, 31W, TO-270; Transistor Type:RF MOSFET; Drain Source Voltage Vds:40V DC; Power Dissipation Pd:31W; Operating Frequency Range:136MHz to 520MHz; RF Transistor Case:TO-270; No. of Pins:2
Manufacturer Aliases
NXP Semiconductors has several brands around the world that distributors may use as alternate names. NXP Semiconductors may also be known as the following names:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
Inventory History
3 month trend: -20.08%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-270-2
Contact PlatingTin
MountSurface Mount
Number of Pins2
Number of Terminals2
Weight529.540742 mg
Technical
Drain to Source Breakdown Voltage40 V
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Frequency520 MHz
Gain17.7 dB
Gate to Source Voltage (Vgs)12 V
Max Frequency520 MHz
Max Operating Temperature150 °C
Max Power Dissipation294 W
Min Operating Temperature-40 °C
Number of Elements1
Output Power31 W
Power Dissipation294 W
Test Current10 mA
Test Voltage13.6 V
Voltage Rating40 V
Datasheets & Documents
Download datasheets and manufacturer documentation for NXP Semiconductors AFT05MS031NR1.
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements