Nexperia PBSS4140DPN,115

Name: Nexperia PBSS4140DPN,115
Brand: Nexperia
SKU: PBSS4140DPN,115

Trans GP BJT NPN/PNP 40V 1A Automotive 6-Pin TSOP T/R

$ 0.294

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Distributor		SKU		Min	Pkg
Newark	2	PBSS4140DPN,115	2,090	1	Cut Tape	0.363	0.363	0.363	0.363	0.363
Arrow Electronics		PBSS4140DPN,115	5,030	1		0.090	0.075	0.075	0.075	0.075
Verical		PBSS4140DPN,115	5,030	16				0.294	0.294	0.294
Future Electronics		PBSS4140DPN,115	15,000	3K	Tape & Reel					0.450
DigiKey	3	1727-3896-1-ND	9,000	1	Cut Tape	0.570	0.353	0.224	0.151	0.151

Inventory History

3 month trend: +11.79%

CAD Models

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Datasheets & Documents

Download datasheets and manufacturer documentation for Nexperia PBSS4140DPN,115.

Official Datasheet1 year ago

Inventory History

3 month trend:

+11.79%

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Supply Chain

Country of OriginMalaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2001-12-14

Lifecycle StatusProduction (Last Updated: 2 years ago)

Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)

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Descriptions

Descriptions of Nexperia PBSS4140DPN,115 provided by its distributors.

Trans GP BJT NPN/PNP 40V 1A Automotive 6-Pin TSOP T/R

Verical

Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 2-Element, NPN and PNP, Silicon

IHS

40 V low VCEsat NPN/PNP transistor

Nexperia

General Purpose Transistors NPN,PNP Ic=1A VCEsat=500mV hfe=300~900 P=600mW SC74

HQonline

Dual NPN/PNP transistor,PBSS4140DPN

RS APAC

Nexperia NPN/PNP, TSOP, , 1 A, -40 V

UnikeyIC

TRANSISTOR, SOT-457; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 40V; Power Dissipation Pd: 370mW; DC Collector Current: -1A; DC Current Gain hFE: 300hFE; Transistor Case Style: SOT-457; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 250V; Continuous Collector Current Ic Max: 1A; Current Ic @ Vce Sat: 50mA; Current Ic Continuous a Max: 1A; Current Ic hFE: 500mA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Typ: 150MHz; Hfe Min: 300; Module Configuration: Dual; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Power Dissipation Ptot Max: 750mW; Power Dissipation per device Max: 750mW; SMD Marking: M2; Voltage Vcbo: 40V

Farnell

Bipolar Transistor Array; Module Configuration:Dual; Transistor Polarity:NPN & PNP; Collector Emitter Voltage, V(br)ceo:40V; Transition Frequency Typ, ft:150MHz; Power Dissipation, Pd:370mW; DC Collector Current:1A ;RoHS Compliant: Yes

Newark