Nexperia GAN041-650WSBQ

Name: Nexperia GAN041-650WSBQ
Brand: Nexperia
SKU: GAN041-650WSBQ

Trans MOSFET N-CH GaN 650V 47.2A 3-Pin(3+Tab) TO-247 Tube

$ 7.67

Production

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Newark		GAN041-650WSBQ	52	1		24.360	17.070	14.270	12.400	12.400
Verical	3	GAN041-650WSBQ	13,686	25				16.388	14.663	13.800
Arrow Electronics		GAN041-650WSBQ	268	14				8.069	8.069	8.069
Rochester Electronics		GAN041-650WSBQ	18,696					13.110	11.730	11.040	18h
Future Electronics		GAN041-650WSBQ	300	300	Tube				7.060	7.030

Inventory History

3 month trend: +911%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Nexperia GAN041-650WSBQ.

Future Electronics

Datasheet11 pages6 years ago

TME

Inventory History

3 month trend:

+911%

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Supply Chain

Lifecycle StatusProduction (Last Updated: 2 years ago)

Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)

Descriptions

Descriptions of Nexperia GAN041-650WSBQ provided by its distributors.

Trans MOSFET N-CH GaN 650V 47.2A 3-Pin(3+Tab) TO-247 Tube

Verical

Gallium Nitride (GaN) Transistor, 650 V, 47.2 A, 41 Milliohms, 22 nC, TO-247, 3 Pins, Surface Mount

Avnet

650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

Nexperia

650 V 35 mOhm Through Hole N-Channel Gallium Nitride (GaN) FET - TO-247

Future Electronics

Transistor JFET N-CH 650V 47.2A 3-Pin TO-247

Avnet Japan

Nexperia MOS, Vds=650 V, 47.2 A, TO-247

UnikeyIC

GAN TRANSISTOR, 650V, 47.2A, TO-247; Drain Source Voltage Vds:650V; Continuous Drain Current Id:47.2A; Typical Gate Charge:22nC; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:-; Qualification:- RoHS Compliant: Yes

Newark