Renesas CM600DU-24F

Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel
NRND

Price and Stock

Datasheets & Documents

Download datasheets and manufacturer documentation for Renesas CM600DU-24F.

Newark

Datasheet4 pages17 years ago

iiiC

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-01-08
Lifecycle StatusNRND (Last Updated: 4 months ago)

Descriptions

Descriptions of Renesas CM600DU-24F provided by its distributors.

Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel
PLC Direct is not an authorized distributor. We offer a broad range of in-stock products with minimal lead time.
IGBT MOD 1200V 600A 1540W
POWER IGBT TRANSISTOR
Igbt, Module, 1.2Kv, 600A; Continuous Collector Current:600A; Collector Emitter Saturation Voltage:1.95V; Power Dissipation:1.54Kw; Operating Temperature Max:150°C; Igbt Termination:Tab; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: No |Mitsubishi Electric CM600DU-24F

Manufacturer Aliases

Renesas has several brands around the world that distributors may use as alternate names. Renesas may also be known as the following names:

  • Renesas Electronics
  • Renesas Electronics America Inc
  • Renesas Electronics America
  • RENESA
  • REN
  • RENES
  • RENESAS TECHNOLOGY CORP
  • RENESAS TECHNOLOGY
  • Renesas Electronics Corporation
  • RENESAS ELECTRONICS CORP
  • RENSAS
  • RENASAS
  • Renesas / Intersil
  • RNS
  • RENESAS-PB
  • RENESASTEC
  • RENESES
  • Renesas Technology America
  • Renesas Design Germany GmbH
  • Renesas / IDT
  • RENESASE
  • RENESAS TECHNOLOGY HONG KONG
  • Renesas Electronics Operations Services Limited
  • RENEASAS
  • RENESAS/M

Part Number Aliases

This part may be known by these alternate part numbers:

  • CM600DU24F