Renesas CM400HA-24A

Name: Renesas CM400HA-24A
Brand: Renesas
SKU: CM400HA-24A

Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min
Farnell	CM400HA-24A	0	1	213.70*	213.70*	213.70*	213.70*	213.70*	15h
ATI ACCURATE TECHNOLOGY	CM400HA-24A-MITSUBISHI	9		241.50	205.28	205.28	205.28	205.28	6h
Aztech	CM400HA-24A	362		17.720	17.720	17.720	17.720	17.720	1d
Summit Electronics	CM400HA-24A	Contact							>1wk
XINVRY	CM400HA-24A	Contact							>1wk

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Renesas CM400HA-24A.

Official Datasheet7 years ago

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2010-07-16

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-03-15

LTD Date2025-09-30

Descriptions

Descriptions of Renesas CM400HA-24A provided by its distributors.

Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel

IHS

Trans IGBT Module N-CH 1200V 400A 2350W 4-Pin

Richardson RFPD

IGBT MODULE, 1200V, 400A, IGBTMOD; DC Co; IGBT MODULE, 1200V, 400A, IGBTMOD; DC Collector Current: 400A; Collector Emitter Saturation Voltage Vce(on): 1.2kV; Power Dissipation Pd: 2.35kW; Junction Temperature, Tj Max: 150°C;

Farnell

Igbt Module, 1200V, 400A, Igbtmod; Transistor, Polaridad:Canal N; Corriente De Colector Dc:400A; Tensión De Saturación Colector-Emisor Vce(On):1.2Kv; Disipación De Potencia Pd:2.35Kw; Tensión Colector Emisor V(Br)Ceo:1.2Kv |Mitsubishi Electric CM400HA-24A

Newark