Renesas CM400DY-12NF

Name: Renesas CM400DY-12NF
Brand: Renesas
SKU: CM400DY-12NF

Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel

Obsolete

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Distributor	SKU		Min
Farnell	CM400DY-12NF	0	1	231.62*	229.81*	229.81*	229.81*	229.81*	3h
ATI ACCURATE TECHNOLOGY	CM400DY-12NF-MITSUBISHI	13		252.00	214.20	214.20	214.20	214.20	3h
IC Components Ltd.	CM400DY12NF	13,100		64.380	64.380	64.380	64.380	64.380	3d
Anlinkda	CM400DY-12NF	266		288.44	258.35	221.28	216.78	207.79	1d
Bison Technologies	CM400DY-12NF-217261	220				111.41	111.41	111.41	2d

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Renesas CM400DY-12NF.

IHS

Datasheet0 pages0 years ago

Farnell

Newark

iiiC

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-03-15

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-03-15

LTD Date2025-09-30

Descriptions

Descriptions of Renesas CM400DY-12NF provided by its distributors.

Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel

IHS

Trans Igbt Module N-Ch 600V 400A

Verical

IGBT MODULE, 600V, 400A; DC Collector Cu; IGBT MODULE, 600V, 400A; DC Collector Current: 400A; Collector Emitter Saturation Voltage Vce(on): 600V; Power Dissipation Pd: 1.13kW; Junction Temperature, Tj Max: 150°C; IGBT Termi

Farnell

Igbt Module, 600V, 400A; Transistor, Polaridad:Canal N; Corriente De Colector Dc:400A; Tensión De Saturación Colector-Emisor Vce(On):600V; Disipación De Potencia Pd:1.13Kw; Tensión Colector Emisor V(Br)Ceo:600V; Núm. De Contactos:7 |Mitsubishi Electric CM400DY-12NF

Newark