Renesas CM300DY-12NF

Name: Renesas CM300DY-12NF
Brand: Renesas
SKU: CM300DY-12NF

Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel

Obsolete

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Distributor	SKU		Min
element14 APAC	CM300DY-12NF	0	1	206.09*	195.05*	195.05*	195.05*	195.05*	1d
Farnell	CM300DY-12NF	0	1	248.81*	206.16*	206.16*	206.16*	206.16*	4h
ATI ACCURATE TECHNOLOGY	CM300DY-12NF-MITSUBISHI	18		189.00	160.65	160.65	160.65	160.65	9h
Classic Components	CM300DY-12NF	18							2d
ARCEL Power Electronics	CM300DY-12NF	0	1	112.40*	112.40*	112.40*	112.40*	112.40*	2h

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Renesas CM300DY-12NF.

IHS

Datasheet0 pages0 years ago

Farnell

Newark

iiiC

Supply Chain

Lifecycle StatusObsolete (Last Updated: 4 months ago)

Descriptions

Descriptions of Renesas CM300DY-12NF provided by its distributors.

Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel

IHS

Trans IGBT Module N-CH 600V 300A 780000mW 7-Pin

Verical

IGBT Module; DC Collector Current: 300A;; IGBT Module; DC Collector Current: 300A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 780W; Junction Temperature, Tj Max: 150°C; IGBT Termination: Tab; Col

Farnell

Igbt Module; Corriente De Colector Dc:300A; Tensión De Saturación Colector-Emisor Vce(On):1.7V; Disipación De Potencia Pd:780W; Tensión Colector Emisor V(Br)Ceo:600V; Núm. De Contactos:7; Temperatura De Trabajo Máx.:150°C |Mitsubishi Electric CM300DY-12NF

Newark