Renesas CM200DY-24NF

Name: Renesas CM200DY-24NF
Brand: Renesas
SKU: CM200DY-24NF

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor	SKU		Min
Newark	CM200DY-24NF	0	10
ATI ACCURATE TECHNOLOGY	CM200DY-24NF-MITSUBISHI	39		276.00	234.60	234.60	234.60	234.60	10h
Williams Automation	2046457	20		200.00	200.00	200.00	200.00	200.00	16h
ARCEL Power Electronics	CM200DY-24NF	0	1	120.15*	120.15*	120.15*	120.15*	120.15*	12h
Summit Electronics	CM200DY-24NF	Contact							>1wk

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Renesas CM200DY-24NF.

IHS

Datasheet0 pages0 years ago

Newark

iiiC

TME

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-03-15

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-03-15

LTD Date2025-09-30

Descriptions

Descriptions of Renesas CM200DY-24NF provided by its distributors.

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel

IHS

Trans IGBT Module N-CH 1200V 200A 1130000mW

Verical

IGBT MODULE NF-SERIES DUAL

Galco

POWER IGBT TRANSISTOR

Richardson RFPD

Standard Package

YIC International

Igbt Module; Continuous Collector Current:200A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:1.13Kw; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv; Product Range:- Rohs Compliant: Yes |Mitsubishi Electric CM200DY-24NF

Newark