Micron MT53E256M32D2DS-053 WT:B

Name: Micron MT53E256M32D2DS-053 WT:B
Brand: Micron
SKU: MT53E256M32D2DS-053 WT:B

Active Volatile ROHS3Compliant DRAM ic memory -30C~85C 0.6V 1.1V 8Gb 256M x 32 1.866GHz

$ 72.51

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Distributor		SKU		Min	Pkg
TME	2	MT53E256M32D2DS0	0	1360						30.300	7h
Newark		MT53E256M32D2DS-053 WT:B	0	1		72.510	72.510	72.510	72.510	72.510
Avnet		MT53E256M32D2DS-053 WT:B	0	1360							4d
Farnell		MT53E256M32D2DS-053 WT:B	0	1		54.776*	54.776*	54.776*	54.776*	54.776*	8h
Weyland Electronics Group Pte. Ltd.	2	MT53E256M32D2DS-053 WT:B	2,000	1	Tape & Reel	45.074	45.074	45.074	45.074	45.074	1d

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element14 APAC

Datasheet304 pages5 years ago

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Lifecycle StatusProduction (Last Updated: 4 months ago)

Descriptions

Descriptions of Micron MT53E256M32D2DS-053 WT:B provided by its distributors.

Active Volatile ROHS3Compliant DRAM ic memory -30C~85C 0.6V 1.1V 8Gb 256M x 32 1.866GHz

Fly-Wing Technology

DRAM, Mobile LPDDR4, 8 Gbit, 256M x 32bit, 1.866 GHz, 200 Pins, WFBGA

Avnet

DRAM Chip Mobile LPDDR4 SDRAM 8Gbit 256Mx32 1.1V 200-Pin WFBGA Tray

Verical

DRAM, 256M X 32BIT, -30 TO 85DEG C; Available until stocks are exhausted

element14 APAC

1GB 256Mx32 1.866GHz 32bit BGA

Unikeyic (ICkey)

LPDDR4 DRAM, 256MX32, CMOS, PBGA200

IHS

IC DRAM 8GBIT 1.866GHZ 200WFBGA

SHENGYU ELECTRONICS

IC PWR SWITCH N-CHAN 1:1 TO252-3

YIC International

SDRAM, 256M X 32BIT, -25 TO 85DEG C; DRAM Memory Configuration: 256M x 32bit; Memory Case Style: WFBGA; No. of Pins: 200Pins; IC Interface Type: Parallel; Access Time: 535ps; Page Size: 2048Byte; Operating Temperature Min: -25°

Farnell

Dram, 256M X 32Bit, -30 To 85Deg C; Dram Type:Mobile Lpddr4; Memory Configuration:256M X 32Bit; Clock Frequency Max:1.866Ghz; Ic Case/Package:Wfbga; No. Of Pins:200Pins; Supply Voltage Nom:1.1V; Ic Mounting:Surface Mount Rohs Compliant: Yes |Micron Technology MT53E256M32D2DS-053 WT:B

Newark