Infineon SPD08N50C3ATMA1

Name: Infineon SPD08N50C3ATMA1
Brand: Infineon
SKU: SPD08N50C3ATMA1

Trans Mosfet N-ch 500V 7.6A 3-PIN(2+TAB) Dpak T/r / Mosfet N-ch 500V 7.6A Dpak

$ 1.013

EOL

Datasheet

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Price and Stock

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SKU

Min

Pkg

Bulk Pricing

Rochester Electronics

USD

USD

Tape & Reel

USD

Cut Tape

USD

2500

USD

0.601

Inventory History

3 month trend: -3.68%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon SPD08N50C3ATMA1.

element14 APAC

Datasheet11 pages21 years ago

IHS

Newark

Farnell

iiiC

Inventory History

3 month trend:

-3.68%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-07-11

Lifecycle StatusEOL (Last Updated: 5 months ago)

LTB Date2026-09-30

LTD Date2027-03-31

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Descriptions

Descriptions of Infineon SPD08N50C3ATMA1 provided by its distributors.

Trans MOSFET N-CH 500V 7.6A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 500V 7.6A DPAK

Win Source

Power Field-Effect Transistor, 7.6A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IHS

83W(Tc) 20V 3.9V@ 350µA 32nC@ 10 V 1individualNChannel 500V 600mΩ@ 4.6A,10V 7.6A 750pF@25V TO-252-3 SMD mount 6.5mm*6.22mm*2.3mm

UnikeyIC

MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:560V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:7.6A; Package / Case:TO-252; Power Dissipation Pd:83W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:560V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC

Replacement for 500V CoolMOS C3 is 500V CoolMOS CE >> Click & go to 500V CoolMOS CE | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter

Infineon