Infineon SPD07N60C3ATMA1

Name: Infineon SPD07N60C3ATMA1
Brand: Infineon
SKU: SPD07N60C3ATMA1

SPD07N60C3 Series 650 V 0.6 Ohm 7.3 A CoolMOS Power Transistor - PG-TO-252

$ 1.16

EOL

Datasheet

Manufacturer Page

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor

SKU

Min

Pkg

Bulk Pricing

Arrow Electronics

SPD07N60C3ATMA1

10,000

2500

USD

2500

USD

Cut Tape

USD

2500

Tape & Reel

USD

0.540

Rochester Electronics

USD

3 month trend: -57.15%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon SPD07N60C3ATMA1.

element14 APAC

Datasheet13 pages21 years ago

IHS

Farnell

DigiKey

Inventory History

3 month trend:

-57.15%

CAD Models

Download Infineon SPD07N60C3ATMA1 symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
EE Concierge	SymbolFootprint

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Country of OriginMainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2001-08-20

Lifecycle StatusEOL (Last Updated: 2 months ago)

LTB Date2026-09-30

LTD Date2027-03-31

Related Parts

InfineonSPD08N50C3ATMA1

Trans MOSFET N-CH 500V 7.6A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 500V 7.6A DPAK

Details

STMicroelectronicsSTD10NM60ND

N-channel 600 V, 0.57 Ohm, 8 A, DPAK FDmesh(TM) II Power MOSFET

Details

InfineonSPD04N60C3ATMA1

Power MOSFET, N Channel, 650 V, 4.5 A, 0.85 ohm, TO-252 (DPAK), Surface Mount

Details

InfineonIPD50R520CPATMA1

MOSFET Transistor, N Channel, 7.1 A, 550 V, 520 mohm, 10 V, 3 V

Details

STMicroelectronicsSTD3NK60ZT4

Transistor MOSFET N-CH 600V 2.4A 3-Pin (2+Tab) DPAK T/R

Details

onsemiFQD1N60TF

2.5W(Ta),30W(Tc) 5V@ 250¦ÌA 6nC@ 10V 1N 600V 11.5¦¸@ 500mA,10V 150pF@25V DPAK

Details

Descriptions

Descriptions of Infineon SPD07N60C3ATMA1 provided by its distributors.

SPD07N60C3 Series 650 V 0.6 Ohm 7.3 A CoolMOS Power Transistor - PG-TO-252

Future Electronics

POWER TRANSISTOR Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:7.3A; Drain Source Voltage Vds:650V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:7.3A; Package / Case:TO-252; Power Dissipation Pd:83W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC

Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter

Infineon