Infineon JANSR2N7506U8
NRND
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Elcom Components | JANSR2N7506U8 | 1,096 | 15m | |||||||||
| Quest | JANSR2N7506U8 | 876 | 9h |
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-09-03
Lifecycle StatusNRND (Last Updated: 2 months ago)
Descriptions
Descriptions of Infineon JANSR2N7506U8 provided by its distributors.
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.2 package, SMD-0.2
Infineon SCT
Trans MOSFET P-CH 100V 3.1A 3-Pin SMD-0.2
Benefits: Proven performance and reliability in space applications.; Packaged on a MIL-PRF-19500 manufacturing line
Power Field-Effect Transistor
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technical Specifications
Physical
Body MaterialCeramic
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)3.1 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance1.2 Ω
Fall Time85 ns
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation23 W
Rise Time26 ns
Turn-Off Delay Time24 ns
Turn-On Delay Time18 ns