Infineon ISP12DP06NMXTSA1

P-Channel 60 V 2.8 A (Ta) 1.8 W (Ta) SMT Small Signal MOSFET - PG-SOT-223-4

Mosfet, P-Ch, -60V, -2.8A, 150Deg C Rohs Compliant: Yes |Infineon Technologies ISP12DP06NMXTSA1

Trans MOSFET P-CH 60V 2.8A 4-Pin(3+Tab) SOT-223 T/R

MOSFET P-CH 60V 2.8A SOT223-4 / P-Channel 60 V 2.8A (Ta) 1.8W (Ta), 4.2W (Tc) Surface Mount PG-SOT223-4

Infineon PMOS, Vds=60 V, 2.8 A, SOT-223, , 3

Power Field-Effect Transistor, 2.8A I(D), 60V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

P-CH 60V 2,8A 125mOhm SOT-223-4

DC-DC Regulated Power Supply Module

OptiMOS™ P-channel 60V power MOSFETs in SOT-223 package is the new technology targeted for consumer applications. Main advantage of OptiMOS™ P-channel MOSFETs is the simplifying of the design complexity in medium and low power applications. Its easy interface to Microcontroller Unit (MCU), fast switching as well as avalanche ruggedness makes Infineon’s OptiMOS™ P-channel MOSFETs suitable for high quality demanding applications. The product improve efficiency at low loads due to low Qg.and is available in logic level featuring a wide RDS(on) range.