Infineon IRS2109STRPBF

Name: Infineon IRS2109STRPBF
Brand: Infineon
SKU: IRS2109STRPBF

Tape & Reel (TR) IRS2109S Half-Bridge 1996 gate driver 220ns 125C 290mA 600mA 625mW

$ 0.579

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Datasheet

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Price and Stock

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Distributor

SKU

Min

Pkg

Bulk Pricing

Newark

IRS2109STRPBF

4,525

Cut Tape

USD

Rochester Electronics

USD

USD

Cut Tape

USD

2500

Tape & Reel

USD

0.500

Inventory History

3 month trend: +32.57%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRS2109STRPBF.

element14 APAC

Datasheet27 pages20 years ago

Inventory History

3 month trend:

+32.57%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8542.39.00.60

Introduction Date2006-04-13

Lifecycle StatusProduction (Last Updated: 7 months ago)

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Descriptions

Descriptions of Infineon IRS2109STRPBF provided by its distributors.

Tape & Reel (TR) IRS2109S Half-Bridge 1996 gate driver 220ns 125C 290mA 600mA 625mW

Fly-Wing Technology

600 V half-bridge gate driver IC with shutdown, SOIC 8N, RoHS

Infineon SCT

IRS2109 Series 600 V 290 mA 20 V Supply Dual Half Bridge Driver - SOIC-8

Future Electronics

Power MOSFET and IGBT Driver, 1/2 Bridge, 600V, 8-pin SOIC, T/R

Avnet

Gate Drivers; INFINEON; IRS2109STRPBF; 2; 10 V - 20 V; 8; Surface Mount

Maritex

MOSFET DRIVER, -40 TO 125DEG C; Driver Configuration: Half Bridge; Peak Output Current: 600mA; Supply Voltage Min: 10V; Supply Voltage Max: 20V; Driver Case Style: SOIC; No. of Pins: 8Pins; Input Delay: 750ns; Output Delay: 200ns; Operating Temperature Min: -40°C; Operating Temperature Max: 125°C; Product Range: -; Automotive Qualification Standard: -; SVHC: No SVHC (15-Jan-2019)

Farnell

IGBT Gate Driver IC; Device Type:High-Side; No. of Outputs:2; Output Voltage:620V; Output Current:600mA; Source Output Current Max:120mA; Sink Output Current:250mA; Power Dissipation, Pd:0.625W; Supply Voltage Min:10V ;RoHS Compliant: Yes

Newark

600 V half-bridge gate driver IC IGBTs and MOSFETs with typical 0.29 A source and 0.6 A sink currents in 8 Lead SOIC package. Also available in 8 Lead PDIP, 14 Lead SOIC, 14 Lead PDIP.For the new version with our SOI technology we recommend 2ED2109S06F, providing integrated bootstrap diode, better robustness and higher switching frequency

Infineon