Infineon IRLS3034TRLPBF

Name: Infineon IRLS3034TRLPBF
Brand: Infineon
SKU: IRLS3034TRLPBF

Power MOSFET, N Channel, 40 V, 195 A, 0.0017 ohm, TO-263 (D2PAK), Surface Mount

$ 1.354

EOL

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Arrow Electronics		IRLS3034TRLPBF	512	1		3.023	2.183	1.555	1.555	1.555
Rochester Electronics		IRLS3034TRLPBF	385					1.580	1.310	1.170	12h
DigiKey	3	IRLS3034TRLPBFCT-ND	3,047	1	Cut Tape	3.830	2.505	1.750	1.750	1.750
Future Electronics	2	IRLS3034TRLPBF	0	800	Tape & Reel				2.280	2.230
Avnet		IRLS3034TRLPBF	0	800					1.284	1.126	15h

Inventory History

3 month trend: -4.71%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLS3034TRLPBF.

IHS

Datasheet11 pages16 years ago

Datasheet10 pages16 years ago

Inventory History

3 month trend:

-4.71%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRLS3034TRLPBF

InfineonIRLS3034PBF

Price @ 1000

$ 1.354

$ 6.52

Stock

185,311

147,731

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

40 V

Continuous Drain Current (ID)

195 A

Threshold Voltage

2.5 V

Rds On Max

1.7 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

195 W

375 W

Input Capacitance

10.315 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-01-14

Lifecycle StatusEOL (Last Updated: 1 month ago)

LTB Date2026-09-30

LTD Date2027-03-31

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Descriptions

Descriptions of Infineon IRLS3034TRLPBF provided by its distributors.

Power MOSFET, N Channel, 40 V, 195 A, 0.0017 ohm, TO-263 (D2PAK), Surface Mount

EBV Elektronik

40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

N CH POWER MOSFET, HEXFET, 40V, 343A, D2PAK ; Transistor Polarity:N Channel; Continuous Drain Current Id:343A; Drain Source Voltage Vds:40V; On Resistance Rds(on):1.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V ;RoHS Compliant: Yes

Newark

Power Field-Effect Transistor, 195A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

Benefits: Optimized for Logic Level Drive; Very Low RDS(ON) at 4.5V VGS; Superior R*Q at 4.5V VGS; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free | Target Applications: Battery Operated Drive

Infineon