Infineon IRLS3034PBF

Name: Infineon IRLS3034PBF
Brand: Infineon
SKU: IRLS3034PBF

Single N-Channel 40 V 1.7 mOhm 108 nC HEXFET® Power Mosfet - D2PAK

$ 6.52

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRLS3034PBF	0	2	Bulk		6.820	6.520	6.520	6.520	3h
Farnell	IRLS3034PBF	0	1		2.084*	2.071*	2.058*	2.017*	2.017*	11h
Win Source	WS-IRLS3034PBF	184	10			6.257	4.172	4.172	4.172	12h
Worldway Electronics	IRLS3034PBF	16,323	7	Tube		2.257	2.188	2.073	2.073	11h
GreenTree Electronics	IRLS3034PBF	450								3h

CAD Models

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Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLS3034PBF.

IHS

Datasheet11 pages16 years ago

Datasheet10 pages16 years ago

iiiC

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Alternate Parts

This Part

Alternate Parts

InfineonIRLS3034PBF

InfineonIRLS3034TRLPBF

Price @ 1000

$ 6.52

$ 1.354

Stock

147,731

183,711

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

40 V

Continuous Drain Current (ID)

195 A

Threshold Voltage

2.5 V

Rds On Max

1.7 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

375 W

195 W

Input Capacitance

10.315 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-01-14

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRLS3034PBF provided by its distributors.

Single N-Channel 40 V 1.7 mOhm 108 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH 40V 343A 3-Pin(2+Tab) D2PAK Tube

Verical

Power Field-Effect Transistor, 195A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

MOSFET, N-CH 40V 195A D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):1.7mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:343A; Package / Case:D2-PAK; Power Dissipation Pd:375W; Power Dissipation Pd:375W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:40V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V

element14 APAC

Benefits: Optimized for Logic Level Drive; Very Low RDS(ON) at 4.5V VGS; Superior R*Q at 4.5V VGS; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free | Target Applications: Battery Operated Drive

Infineon