Infineon IRFS3004TRLPBF

Name: Infineon IRFS3004TRLPBF
Brand: Infineon
SKU: IRFS3004TRLPBF

MOSFET N-CH 40V 195A D2PAK / Trans MOSFET N-CH Si 40V 340A 3-Pin(2+Tab) D2PAK T/R

$ 1.88

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Newark		IRFS3004TRLPBF	364	1	Cut Tape	3.610	3.070	2.210	1.880	1.880
Rochester Electronics		IRFS3004TRLPBF	3,243					1.830	1.640	1.540	12h
RS (Formerly Allied Electronics)		IRFS3004TRLPBF	0	800	Bulk				5.510	4.960	2h
Farnell	2	IRFS3004TRLPBF	0	1	Cut Tape	4.908*	3.254*	3.254*	3.254*	3.254*	12h
Win Source		WS-IRFS3004TRLPBF	20	20				2.051	1.720	1.720	13h

Inventory History

3 month trend: -33.13%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFS3004TRLPBF.

IHS

Datasheet11 pages17 years ago

Datasheet12 pages17 years ago

RS (Formerly Allied Electronics)

Inventory History

3 month trend:

-33.13%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRFS3004TRLPBF

InfineonAUIRFS3004TRL

Price @ 1000

$ 1.88

$ 2.58

Stock

204,556

108,878

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

TO-252-3

Drain to Source Voltage (Vdss)

40 V

Continuous Drain Current (ID)

195 A

Threshold Voltage

Rds On Max

1.75 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

380 W

Input Capacitance

9.2 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2009-02-26

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2025-03-31

LTD Date2025-09-30

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Descriptions

Descriptions of Infineon IRFS3004TRLPBF provided by its distributors.

MOSFET N-CH 40V 195A D2PAK / Trans MOSFET N-CH Si 40V 340A 3-Pin(2+Tab) D2PAK T/R

Win Source

40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Single N-Channel 40 V 380 W 240 nC Silicon Surface Mount Mosfet - TO-263-3

Future Electronics

MOSFET, 40V, 195A, 1.7 MOHM, 160 NC QG,D2PAK

RS (Formerly Allied Electronics)

Power Field-Effect Transistor, 195A I(D), 40V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:195mA; Drain Source Voltage, Vds:40V; On Resistance, Rds(on):1.4mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2V; Power Dissipation, Pd:380W ;RoHS Compliant: Yes

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon