Infineon IRLR8729TRPBF

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Obsolete

Price and Stock

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLR8729TRPBF.

IHS

Datasheet12 pages16 years ago
Datasheet11 pages16 years ago

iiiC

CAD Models

Download Infineon IRLR8729TRPBF symbol, footprint, and 3D STEP models from our trusted partners.

sourceeCADmCADFILES
EE Concierge
SymbolFootprint
SnapEDA
Footprint
3DDownload
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Alternate Parts

Price @ 1000
$ 0.23
Stock
1,067,379
963,018
Authorized Distributors
2
2
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
50 A
50 A
Threshold Voltage
-
-
Rds On Max
8.9 mΩ
8.9 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
55 W
55 W
Input Capacitance
1.35 nF
1.35 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-12-16
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-09-30
LTD Date2023-03-31

Related Parts

InfineonIRLR8729PBF
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Single N-Channel 30 V 8.4 mOhm 8.5 nC HEXFET® Power Mosfet - DPAK
onsemiFDD8876
PowerTrench® MOSFET, N-Channel, 30V, 73A, 8.2mΩ
Single N-Channel 30 V 9.5 mOhm 9.6 nC HEXFET® Power Mosfet - DPAK
Diodes Inc.DMN3010LK3-13
Mosfet, N-Ch, 30V, 43A, To-252 Rohs Compliant: Yes |Diodes Inc. DMN3010LK3-13
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 8.5A Ta 44A Tc 44A 1.92W 19ns

Descriptions

Descriptions of Infineon IRLR8729TRPBF provided by its distributors.

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 50A I(D), 30V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: Very Low RDS(on) at 4.5V VGS; Ultra-Low Gate Impedance; Fully Characterized Avalanche Voltage and Current; Lead-Free; RoHS compliant
N CH POWER MOSFET, HEXFET, 30V, 58A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:58A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V ;RoHS Compliant: Yes

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IRFIRLR8729TRPBF
  • IRLR8729TRPBF.
  • SP001569082