Infineon IRLR8721TRPBF

Name: Infineon IRLR8721TRPBF
Brand: Infineon
SKU: IRLR8721TRPBF

Single N-Channel 30 V 8.4 mOhm 8.5 nC HEXFET® Power Mosfet - DPAK

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRLR8721TRPBF	0	2K	Bulk					3.180	3h
Farnell	2	IRLR8721TRPBF	0	1	Cut Tape	0.218*	0.218*	0.218*	0.218*	0.218*	14h
Component Stockers USA		IRLR8721TRPBF	18,810			0.150	0.140	0.140	0.130	0.130	>1wk
Win Source		WS-IRLR8721TRPBF	6,710	75				0.809	0.540	0.540	14h
Worldway Electronics	2	IRLR8721	29,629	7			0.074	0.072	0.070	0.068	1d

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLR8721TRPBF.

IHS

Datasheet13 pages13 years ago

Datasheet11 pages18 years ago

Datasheet12 pages13 years ago

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CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRLR8721TRPBF

InfineonIRLR8721PBF

Price @ 1000

$ 3.35

Stock

152,614

49,085

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

30 V

Continuous Drain Current (ID)

65 A

Threshold Voltage

1.9 V

Rds On Max

8.4 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

65 W

Input Capacitance

1.03 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2007-08-10

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2019-11-15

LTD Date2020-05-15

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Descriptions

Descriptions of Infineon IRLR8721TRPBF provided by its distributors.

Single N-Channel 30 V 8.4 mOhm 8.5 nC HEXFET® Power Mosfet - DPAK

Future Electronics

MOSFET, 30V, 65A, 8.4 MOHM, 8.5 NC QG, LOGIC LEVEL, D-PAK

RS (Formerly Allied Electronics)

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 65A I(D), 30V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:65A; On Resistance Rds(On):0.0063Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V Rohs Compliant: Yes

Newark