Infineon IRLR8726TRPBF

Name: Infineon IRLR8726TRPBF
Brand: Infineon
SKU: IRLR8726TRPBF

Single N-Channel 30 V 5.8 mOhm 23 nC HEXFET® Power Mosfet - TO-252-3

$ 0.236

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet	2	IRLR8726TRPBF	44,000	2K						0.169	3d
Newark	2	IRLR8726TRPBF	7,049	1	Cut Tape	0.176	0.176	0.176	0.176	0.176
Future Electronics	2	IRLR8726TRPBF	24,000	2K	Tape & Reel					0.185
Arrow Electronics	3	IRLR8726TRPBF	12	1		0.639	0.433	0.433	0.433	0.433
Rutronik		TMOSP12671	4,000	2K						0.211	4h

Inventory History

3 month trend: -8.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLR8726TRPBF.

IHS

Datasheet12 pages16 years ago

Datasheet11 pages16 years ago

Newark

iiiC

Inventory History

3 month trend:

-8.00%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRLR8726TRPBF

InfineonIRLR8726TRLPBF

Price @ 1000

$ 0.236

$ 0.231

Stock

1,709,318

433,785

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

30 V

Continuous Drain Current (ID)

50 A

86 A

Threshold Voltage

Rds On Max

5.8 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

75 W

Input Capacitance

2.15 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-12-16

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRLR8726TRPBF provided by its distributors.

Single N-Channel 30 V 5.8 mOhm 23 nC HEXFET® Power Mosfet - TO-252-3

Future Electronics

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power MOSFET, N Channel, 30 V, 86 A, 0.004 ohm, TO-252AA, Surface Mount

Avnet

N CH POWER MOSFET, HEXFET, 30A, 86A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:86A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V ;RoHS Compliant: Yes

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 86 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 5.8 / Gate-Source Voltage V = 20 / Fall Time ns = 16 / Rise Time ns = 49 / Turn-OFF Delay Time ns = 15 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 75

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