Infineon IRLR8726PBF

Name: Infineon IRLR8726PBF
Brand: Infineon
SKU: IRLR8726PBF

Single N-Channel 30 V 5.8 mOhm 15 nC HEXFET® Power Mosfet - TO-252AA

$ 0.169

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	IRLR8726PBF	457				0.203	0.169	0.150	1d
RS (Formerly Allied Electronics)		IRLR8726PBF	0	10	Bulk	0.930	0.930	0.930	0.930	1d
Farnell		IRLR8726PBF	0	5		0.714*	0.331*	0.327*	0.320*	1d
Win Source		WS-IRLR8726PBF	54,734	340				0.122	0.099	1h
Worldway Electronics		IRLR8726PBF	14,744	7	Tube	0.034	0.033	0.031	0.031	1d

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLR8726PBF.

IHS

Datasheet12 pages16 years ago

Datasheet11 pages16 years ago

element14 APAC

iiiC

Inventory History

3 month trend:

+0.00%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRLR8726PBF

InfineonIRLR8726TRPBF

Price @ 1000

$ 0.169

$ 0.236

Stock

137,225

1,709,318

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

30 V

Continuous Drain Current (ID)

50 A

Threshold Voltage

1.8 V

Rds On Max

5.8 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

75 W

Input Capacitance

2.15 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-12-16

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

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Descriptions

Descriptions of Infineon IRLR8726PBF provided by its distributors.

Single N-Channel 30 V 5.8 mOhm 15 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 50A I(D), 30V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

Benefits: Very Low RDS(on) at 4.5V VGS; Ultra-Low Gate Impedance; Fully Characterized Avalanche Voltage and Current; Lead-Free; RoHS compliant

Infineon

MOSFET, N-CH 30V 86A DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:75W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:86A; Package / Case:D-PAK; Power Dissipation Pd:75W; Power Dissipation Pd:75W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V

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