Infineon IRLR8726PBF

Name: Infineon IRLR8726PBF
Brand: Infineon
SKU: IRLR8726PBF

Single N-Channel 30 V 5.8 mOhm 15 nC HEXFET® Power Mosfet - TO-252AA

$ 0.169

Obsolete

Datasheet

Manufacturer Page

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor

SKU

Min

Pkg

Bulk Pricing

Rochester Electronics

USD

18h

RS (Formerly Allied Electronics)

IRLR8726PBF

Bulk

USD

475

USD

20h

Bulk

USD

100

Bulk

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLR8726PBF.

IHS

Datasheet12 pages16 years ago

Datasheet11 pages16 years ago

element14 APAC

iiiC

Inventory History

3 month trend:

+0.00%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRLR8726PBF

InfineonIRLR8726TRPBF

Price @ 1000

$ 0.169

$ 0.367

Stock

261,471

1,474,891

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

30 V

Continuous Drain Current (ID)

50 A

Threshold Voltage

1.8 V

Rds On Max

5.8 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

75 W

Input Capacitance

2.15 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-12-16

Lifecycle StatusObsolete (Last Updated: 7 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

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Descriptions

Descriptions of Infineon IRLR8726PBF provided by its distributors.

Single N-Channel 30 V 5.8 mOhm 15 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 50A I(D), 30V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

Benefits: Very Low RDS(on) at 4.5V VGS; Ultra-Low Gate Impedance; Fully Characterized Avalanche Voltage and Current; Lead-Free; RoHS compliant

Infineon

MOSFET, N-CH 30V 86A DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:75W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:86A; Package / Case:D-PAK; Power Dissipation Pd:75W; Power Dissipation Pd:75W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V

element14 APAC